| IPB107N20N3 G | |
|---|---|
| Part Number | IPB107N20N3 G |
| Hiersteller | Infineon Technologies |
| Beschreiwung | IPB107N20N3 G Infineon Technologies |
| Quantitéit Verfügbar | 32984 pcs new original in stock. Ufro Stock & Devis |
| Ecadmodell | |
| Dateblieder | |
| IPB107N20N3 G Price |
Ufro Präis & Lead Time Online or Email us: Info@ariat-tech.com |
| Technesch Informatioun vun IPB107N20N3 G | |||
|---|---|---|---|
| Hiersteller Part Zuel | IPB107N20N3 G | Kategorie | Diskrete Semiconductor Products |
| Hiersteller | Cypress Semiconductor (Infineon Technologies) | Beschreiwung | IPB107N20N3 G Infineon Technologies |
| Package / Fall | Tape & Reel (TR) | Quantitéit Verfügbar | 32984 pcs |
| Vgs (th) (Max) @ Id | 4V @ 270µA | Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) | Supplier Device Package | PG-TO263-2 |
| Serie | OptiMOS™ | Rds On (Max) @ Id, Vgs | 10.7 mOhm @ 88A, 10V |
| Power Dissipation (Max) | 300W (Tc) | Verpakung | Tape & Reel (TR) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Operatioun Temperatur | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 7100pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V | FET Typ | N-Channel |
| FET Feature | - | Fuert Volt (Max Rds On, Min Rds On) | 10V |
| Entworf fir Source Voltage (Vdss) | 200V | Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 88A (Tc) |
| Download | IPB107N20N3 G PDF - EN.pdf | ||
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| IPB107N20N3 G Stock | IPB107N20N3 G Präis | IPB107N20N3 G Elektronik |
| IPB107N20N3 G Komponenten | IPB107N20N3 G Stamminventar | IPB107N20N3 G Digikey |
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| IPB107N20N3 G Bild | IPB107N20N3 G Bild | IPB107N20N3 G PDF |
| IPB107N20N3 G Dateblatt | Luet IPB107N20N3 G Dateblatt | Fabrikant beschwéiert Cypress Semiconductor (Infineon Technologies) |
