| IPB60R600C6ATMA1 | |
|---|---|
| Part Number | IPB60R600C6ATMA1 |
| Hiersteller | Infineon Technologies |
| Beschreiwung | MOSFET N-CH 600V 7.3A D2PAK |
| Quantitéit Verfügbar | 2618 pcs new original in stock. Ufro Stock & Devis |
| Ecadmodell | |
| Dateblieder | 1.IPB60R600C6ATMA1.pdf2.IPB60R600C6ATMA1.pdf3.IPB60R600C6ATMA1.pdf |
| IPB60R600C6ATMA1 Price |
Ufro Präis & Lead Time Online or Email us: Info@ariat-tech.com |
| Technesch Informatioun vun IPB60R600C6ATMA1 | |||
|---|---|---|---|
| Hiersteller Part Zuel | IPB60R600C6ATMA1 | Kategorie | |
| Hiersteller | Cypress Semiconductor (Infineon Technologies) | Beschreiwung | MOSFET N-CH 600V 7.3A D2PAK |
| Package / Fall | PG-TO263-3 | Quantitéit Verfügbar | 2618 pcs |
| Vgs (th) (Max) @ Id | 3.5V @ 200µA | Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) | Supplier Device Package | PG-TO263-3 |
| Serie | CoolMOS™ C6 | Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| Power Dissipation (Max) | 63W (Tc) | Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package protegéieren | Tape & Reel (TR) | Operatioun Temperatur | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V | FET Typ | N-Channel |
| FET Feature | - | Fuert Volt (Max Rds On, Min Rds On) | 10V |
| Entworf fir Source Voltage (Vdss) | 600 V | Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.3A (Tc) |
| Basis Produktnummer | IPB60R | ||
| Download | IPB60R600C6ATMA1 PDF - EN.pdf | ||
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| IPB60R600C6ATMA1 Komponenten | IPB60R600C6ATMA1 Stamminventar | IPB60R600C6ATMA1 Digikey |
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| IPB60R600C6ATMA1 Bild | IPB60R600C6ATMA1 Bild | IPB60R600C6ATMA1 PDF |
| IPB60R600C6ATMA1 Dateblatt | Luet IPB60R600C6ATMA1 Dateblatt | Fabrikant beschwéiert Cypress Semiconductor (Infineon Technologies) |
