| IPB80N06S2L07ATMA3 | |
|---|---|
| Part Number | IPB80N06S2L07ATMA3 |
| Hiersteller | Infineon Technologies |
| Beschreiwung | MOSFET N-CH 55V 80A TO263-3 |
| Quantitéit Verfügbar | 2565 pcs new original in stock. Ufro Stock & Devis |
| Ecadmodell | |
| Dateblieder | 1.IPB80N06S2L07ATMA3.pdf2.IPB80N06S2L07ATMA3.pdf3.IPB80N06S2L07ATMA3.pdf |
| IPB80N06S2L07ATMA3 Price |
Ufro Präis & Lead Time Online or Email us: Info@ariat-tech.com |
| Technesch Informatioun vun IPB80N06S2L07ATMA3 | |||
|---|---|---|---|
| Hiersteller Part Zuel | IPB80N06S2L07ATMA3 | Kategorie | |
| Hiersteller | Cypress Semiconductor (Infineon Technologies) | Beschreiwung | MOSFET N-CH 55V 80A TO263-3 |
| Package / Fall | PG-TO263-3-2 | Quantitéit Verfügbar | 2565 pcs |
| Vgs (th) (Max) @ Id | 2V @ 150µA | Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) | Supplier Device Package | PG-TO263-3-2 |
| Serie | OptiMOS™ | Rds On (Max) @ Id, Vgs | 6.7mOhm @ 60A, 10V |
| Power Dissipation (Max) | 210W (Tc) | Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package protegéieren | Tape & Reel (TR) | Operatioun Temperatur | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | FET Typ | N-Channel |
| FET Feature | - | Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V |
| Entworf fir Source Voltage (Vdss) | 55 V | Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) |
| Basis Produktnummer | IPB80N | ||
| Download | IPB80N06S2L07ATMA3 PDF - EN.pdf | ||
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| IPB80N06S2L07ATMA3 Komponenten | IPB80N06S2L07ATMA3 Stamminventar | IPB80N06S2L07ATMA3 Digikey |
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| IPB80N06S2L07ATMA3 Bild | IPB80N06S2L07ATMA3 Bild | IPB80N06S2L07ATMA3 PDF |
| IPB80N06S2L07ATMA3 Dateblatt | Luet IPB80N06S2L07ATMA3 Dateblatt | Fabrikant beschwéiert Cypress Semiconductor (Infineon Technologies) |
